Ionizing Radiation Effects on the Noise of 65 nm CMOS Transistors for Pixel Sensor Readout at Extreme Total Dose Levels

Articolo

Data di Pubblicazione:

2018

Tipologia CRIS:

1.1 Articolo in rivista

Keywords:

Analog front-end electronics; ionizing radiation effects; MOSFET; noise; Nuclear and High Energy Physics; Nuclear Energy and Engineering; Electrical and Electronic Engineering

Elenco autori:

Re, Valerio; Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Riceputi, Elisa; Traversi, Gianluca

Autori di Ateneo:

RATTI LODOVICO

Link alla scheda completa:

https://iris.unipv.it/handle/11571/1209318

Link al Full Text:

https://iris.unipv.it//retrieve/handle/11571/1209318/453180/3-pre-TNS2777741_65nm_extr-total-dose.pdf

Pubblicato in:

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Journal

Dati Generali

URL

http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=23

Ionizing Radiation Effects on the Noise of 65 nm CMOS Transistors for Pixel Sensor Readout at Extreme Total Dose Levels

Re, Valerio; Gaioni, Luigi; Manghisoni, Massimo; Ratti, Lodovico; Riceputi, Elisa; Traversi, Gianluca

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Dati Generali

URL