Spectroscopic ellipsometry of intentionally disordered superlattices

We characterized the electronic properties of ordered and intentionally disordered GaAs–Al(x)Ga(1−xAs) superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to their different electronic structure.