Data di Pubblicazione:
1998
Abstract:
This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the s-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performances of these integrated devices
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
S-PARAMETERS; ELEMENTAL SEMICONDUCTORS; EQUIVALENT CIRCUITS; INDUCTORS; SILICON; SI; LUMPED ELEMENT MODEL; PARASITIC EFFECTS; SILICON SUBSTRATE; SPIRAL INTEGRATED INDUCTOR; WIDEBAND TWO-PORT MEASUREMENT
Elenco autori:
Arcioni, Paolo; Castello, Rinaldo; G., DE ASTIS; E., Sacchi; Svelto, Francesco
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