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A 0.13/spl mu/m CMOS front-end, for DCS1800/UMTS/802.11b-g with multiband positive feedback low-noise amplifier.

Articolo
Data di Pubblicazione:
2006
Abstract:
This paper presents a fully-integrated CMOS front-end based on a direct conversion architecture for UMTS/802.11b-g and a low-IF at 100kHz for DCS 1800. The two key building blocks are a multi-band low noise amplifier that uses positive feedback to improve its gain and a highly linear mixer. The front-end, integrated in 0.13μm CMOS process, exhibits a minimum noise figure of 5.2dB, a programmable gain that can be varied from 13.5dB to 28.5dB, an IIP3 of more than -7.5dBm and an IIP2 better than 50dBm. The total current consumption is 20mA from a 1.2 V supply.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
3G MOBILE COMMUNICATION; CMOS INTEGRATED CIRCUITS; CELLULAR RADIO; FEEDBACK AMPLIFIERS; LOW NOISE AMPLIFIERS; RECEIVERS; 0.13 MICRON; 1.2 V; 100 KHZ; 20 MA; 5.2 DB; CMOS FRONT-END; CMOS PROCESS; CMOS RECEIVER FRONT-END; DCS 1800; UMTS; CURRENT CONSUMPTION
Elenco autori:
Liscidini, Antonio; Brandolini, Massimo; Sanzogni, Davide; Castello, Rinaldo
Link alla scheda completa:
https://iris.unipv.it/handle/11571/104186
Pubblicato in:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Journal
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