Interband optical properties of molecular-beam epitaxially-grown GaAs1-xSbx on GaAs substrates
Articolo
Data di Pubblicazione:
1999
Abstract:
Spectroscopic ellipsometry (SE) from 0.8 to 5 eV and photoreflectance (PR) from 0.7 to 1.5 eV were used to study the interband optical response at room temperature of epitaxial GaAs1−xSbx layers with 0
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
Critical points
Optical properties
III-V semiconductors
Elenco autori:
R., Ferrini; Geddo, Mario; Guizzetti, Giorgio; Patrini, Maddalena; S., Franchi; C., Bocchi; F., Germini; A., Baraldi; R., Magnanini
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