Data di Pubblicazione:
2009
Abstract:
Silicon-rich SiGe alloys represent a promising platform for the development of large-area single-mode
optical waveguides to be integrated in silicon-based optical circuits. We find that SiGe layers epitaxially
grown on Si successfully guide radiation with a 1.55 lm wavelength, but, beyond a critical core thickness,
their optical properties are strongly affected by the clustering of misfit dislocations at the interface
between Si and SiGe, leading to a significant perturbation of the local refractive index. Transmission electron
microscopy and micro-Raman spectroscopy, together with finite-element simulations, provide a
complete analysis of the impact of dislocations on optical propagation
optical waveguides to be integrated in silicon-based optical circuits. We find that SiGe layers epitaxially
grown on Si successfully guide radiation with a 1.55 lm wavelength, but, beyond a critical core thickness,
their optical properties are strongly affected by the clustering of misfit dislocations at the interface
between Si and SiGe, leading to a significant perturbation of the local refractive index. Transmission electron
microscopy and micro-Raman spectroscopy, together with finite-element simulations, provide a
complete analysis of the impact of dislocations on optical propagation
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
Silicon Photonics; Silicon-Germanium waveguides; Misfit Dislocations
Elenco autori:
Trita, Andrea; Bragheri, Francesca; Cristiani, Ilaria; Degiorgio, Vittorio; Chrastina, D.; Colombo, D.; Isella, G.; von Känel, H.; Gramm, F.; Müller, E.; Döbeli, M.; Bonera, E.; Gatti, R.; Pezzoli, F.; Grilli, E.; Guzzi, M.; Miglio, L.
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