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Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface

Articolo
Data di Pubblicazione:
1991
Abstract:
The oxygen content near epitaxial layer‐substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross‐section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer when it was grown on n‐type substrates, while no evidence of oxygen in it was obtained (in concentration detectable by the infrared technique) when grown on p‐type substrates. Interstitial oxygen profiles, near the epitaxial layer‐substrate interface, obtained by analyzing the optical data, are reported and discussed considering different combinations of dopants in the substrate and in the epilayer
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
silicio epitassiale; impurezze di ossigeno; assorbimento ottico
Elenco autori:
Geddo, Mario; B., Pivac; A., Borghesi; A., Stella; M., Pedrotti
Link alla scheda completa:
https://iris.unipv.it/handle/11571/460504
Titolo del libro:
Applied Physics Letters
Pubblicato in:
APPLIED PHYSICS LETTERS
Journal
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