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Quantum Hall effect in bilayer and trilayer graphene

Articolo
Data di Pubblicazione:
2012
Abstract:
We have performed magneto-transport experiments in bilayer and trilayer graphene, at temperatures between 2 and 190 K and magnetic fields up to 22 T. Here we study the observation of the quantum Hall effect in bilayer and trilayer graphene. We have observed the quantum Hall plateaus at v = 4, 8, 12, 16, 20 in bilayer graphene and the quantum Hall plateaus v = +/- 6 and studied their temperature dependence. We have also studied the symmetry properties which are related with different contact configurations and describe the method used to study inhomogeneous samples
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
Graphene, Quantum Hall, Electrical transport
Elenco autori:
C., Cobaleda; Rossella, Francesco; Pezzini, Sergio; E., Diez; Bellani, Vittorio; D. K., Maude; P., Blake
Autori di Ateneo:
BELLANI VITTORIO
Link alla scheda completa:
https://iris.unipv.it/handle/11571/996186
Pubblicato in:
PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS
Journal
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URL

http://onlinelibrary.wiley.com/doi/10.1002/pssc.201100657/abst
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