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  1. Outputs

Development of deep N-well monolithic active pixel sensors in a 0.13 um CMOS technology

Academic Article
Publication Date:
2007
Iris type:
1.1 Articolo in rivista
Keywords:
monolithic sensors; deep submicron CMOS; low-noise analog design
List of contributors:
Bettarini, S.; Bardi, A.; Batignani, G.; Bosi, F.; Calderini, G.; Cenci, R.; Dell'Orso, M.; Forti, F.; Giannetti, P.; Giorgi, M. A.; Lusiani, A.; Marchiori, G.; Morsani, F.; Neri, N.; Paoloni, E.; Rizzo, G.; Walsh, J.; Andreoli, C.; Pozzati, E.; Ratti, Lodovico; Speziali, Valeria; Manghisoni, M.; Re, V.; Traversi, G.; Bosisio, L.; Giacomini, G.; Lanceri, L.; Rachevskaia, I.; Vitale, L.; Bruschi, M.; Giacobbe, B.; Semprini, N.; Spighi, R.; Villa, M.; Zoccoli, A.; Gamba, D.; Giraudo, G.; Mereu, P.; Dalla Betta, G. F.; Soncini, G.; Fontana, G.; Pancheri, L.; Verzellesi, G.
Authors of the University:
RATTI LODOVICO
Handle:
https://iris.unipv.it/handle/11571/32719
Published in:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Journal
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