Publication Date:
2007
abstract:
We report on electrical injection of excitons in a quantum well placed in the intrinsic region of a p–i–n
photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission
spectra with increasing current are signatures of the excitonic character of the emission. This structure is
ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under
electrical injection.
photodiode. Both the narrow linewidth of the electroluminescence at 70 K and the evolution of the emission
spectra with increasing current are signatures of the excitonic character of the emission. This structure is
ready to be integrated in semiconductor microcavities in order to evidence the strong coupling regime under
electrical injection.
Iris type:
1.1 Articolo in rivista
Keywords:
Elettrolunescenza; quantum wells; eccitoni; diodo a eccitoni (Electroluminescence; excitons; exciton diode)
List of contributors:
Bajoni, Daniele; Bouchoule, S; Miard, A; Lemaitre, A; Tignon, J; Bloch, J.
Published in: