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Modulation of Fano resonances by an external magnetic field in semiconductor quantum wells

Articolo
Data di Pubblicazione:
1996
Abstract:
We have studied the dimensionality dependence of the behavior of Fano resonances in the photoluminescence excitation spectra of GaAs---AlxGa1−xAs heterostructures in a magnetic field applied in the Faraday configuration. A striking difference is observed between quasi-two and quasi-three-dimensional systems: while the Fano profiles evolve into Lorentzian lineshapes in two-dimensional systems, Fano resonances emerge from the continuum in three-dimensional-systems with increasing magnetic field.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
Photoluminescence excitation; GaAs; Dimensionality
Elenco autori:
Bellani, Vittorio; E., Pérez; S., Zimmermann; L., Viña; R., Hey; K., Ploog
Autori di Ateneo:
BELLANI VITTORIO
Link alla scheda completa:
https://iris.unipv.it/handle/11571/100617
Pubblicato in:
SOLID-STATE ELECTRONICS
Journal
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URL

http://dx.doi.org/10.1016/0038-1101(95)00218-9
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