Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics

Academic Article

Publication Date:

2004

Iris type:

1.1 Articolo in rivista

Keywords:

silicon on insulator; low-noise design; radiation damage; noise measurements

List of contributors:

Manghisoni, M.; Ratti, Lodovico; Re, V.; Speziali, Valeria; Traversi, G.; Fallica, G.

Authors of the University:

RATTI LODOVICO

Handle:

https://iris.unipv.it/handle/11571/133612

Published in:

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT

Journal