Gamma-ray response of SOI bipolar junction transistors for fast, radiation tolerant front-end electronics

Articolo
Data di Pubblicazione:
2004
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
silicon on insulator; low-noise design; radiation damage; noise measurements
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unipv.it/handle/11571/133612
Pubblicato in:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Journal