A new approach to the design of monolithic active pixel detectors in 0.13 um triple well CMOS technology

Academic Article

Publication Date:

2006

Iris type:

1.1 Articolo in rivista

Keywords:

monolithic sensors; deep submicron CMOS processes; low-noise design

List of contributors:

Bettarini, S.; Batignani, G.; Calderini, G.; Carpinelli, M.; Cenci, R.; Forti, F.; Giorgi, M. A.; Lusiani, A.; Marchiori, G.; Morsani, F.; Neri, N.; Paoloni, E.; Rama, M.; Rizzo, G.; Simi, G.; Walsh, J.; Ratti, Lodovico; Speziali, Valeria; Manghisoni, M.; Re, V.; Traversi, G.; Bosisio, L.; Giacomini, G.; Lanceri, L.; Rachevskaia, I.; Vitale, L.

Authors of the University:

RATTI LODOVICO

Handle:

https://iris.unipv.it/handle/11571/144319

Published in:

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT

Journal