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MOS transistor switching circuit without body effect

Patent
Publication Date:
1998
abstract:
A switching circuit utilizing MOS transistors without body effect having a first transistor inserted with source and drain terminals between two connection terminals, and a second and third transistors inserted in series by means of their respective source and drain terminals between the first transistor and a ground. The gate terminal of the second transistor is connected to the gate terminal of the first transistor to which is applied a command signal. Upon switching a signal is applied in phase opposition to the command signal to the gate terminal of the third transistor. The substrates of the first and the second transistors are connected to a connection node between the second and third transistors. The substrate of the third transistor is connected to ground.
Iris type:
6.1 Brevetto
Keywords:
CMOS; BODY EFFECT; SWITCH
List of contributors:
L., Tomasini; Castello, Rinaldo; G., Clerici; I., Bietti
Handle:
https://iris.unipv.it/handle/11571/145802
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