Skip to Main Content (Press Enter)

Logo UNIPV
  • ×
  • Home
  • Corsi
  • Insegnamenti
  • Professioni
  • Persone
  • Pubblicazioni
  • Strutture

UNIFIND
Logo UNIPV

|

UNIFIND

unipv.it
  • ×
  • Home
  • Corsi
  • Insegnamenti
  • Professioni
  • Persone
  • Pubblicazioni
  • Strutture
  1. Corsi

SiGe BiCMOS D-Band Heterodyne Power Mixer With Back-Off Efficiency Enhanced by Current Clamping

Articolo
Data di Pubblicazione:
2024
Abstract:
A D-band power upconverter in a 55-nm SiGe BiCMOS is presented. The low-output resistance of a switching quad is identified as a limiting factor to mixer power generation in D-band, and common-base transistors are stacked for output power enhancement. Moreover, the current clamping mechanism is exploited to scale the average supply current with output power, improving the efficiency in back-off. Experimental results demonstrate $ {P_{\mathrm{ sat}}}\,\,{=}$ 6.3 dBm and ${oP_{\mathrm{ 1dB}}}\,\,{=}$ 4.5 dBm at 140 GHz, with efficiency of 3.05% and 2.47%, respectively. The power consumption, from a 2-V supply, rises from 70 mW at the quiescent point to 140 mW at $ {P_{\mathrm{ sat}}}$. The measured output power and efficiency compare favorably against previous works.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
BiCMOS; current clamping; D-band; integrated circuits; mixer mmWave; upconverter
Elenco autori:
Bilato, A.; Petricli, I.; Mazzanti, A.
Autori di Ateneo:
MAZZANTI ANDREA
Link alla scheda completa:
https://iris.unipv.it/handle/11571/1496480
Pubblicato in:
IEEE SOLID-STATE CIRCUITS LETTERS
Journal
  • Utilizzo dei cookie

Realizzato con VIVO | Designed by Cineca | 26.9.0.0