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IEEE SOLID-STATE CIRCUITS LETTERS
Rivista
Codice:
E246808
ISSN:
2573-9603
Dati Generali
Dati Generali
Pubblicazioni (16)
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Ordina Pubblicazioni:
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16-Core BiCMOS VCOs With Phase Noise Down to-130 dBc/Hz at 1-MHz Offset From 20 GHz
Articolo
2-Mb embedded phase change memory with 16-ns read access time and 5-Mb/s write throughput in 90-nm BCD technology for automotive applications
Articolo
70-90-GHz self-tuned polyphase filter for wideband I/Q LO generation in a 55-nm BiCMOS transmitter
Articolo
A 0.13-μm BiCMOS, 130-MHz Bandwidth Interface Circuit With Noise Canceling for HDD Fly-Height Resistive Sensors
Articolo
A 130-nm BiCMOS, 2-nV/√Hz Input-Referred Noise Interface Circuit for Multiple Resistive Sensors
Articolo
A 17-mW 0.5-1.5-GHz Bandwidth TIA Based on an Inductor-Stabilized OTA with 35-42-dBm In-Band IIP3
Articolo
A 26-Gb/s 3-D-integrated silicon photonic receiver in bicmos-55 nm and pic25g with-15.2-dbm oma sensitivity
Articolo
A 260-MHz RF Bandwidth Mixer-First Receiver With Third-Order Current-Mode Filtering TIA
Articolo
A 42-GHz TIA in 28-nm CMOS with Less Than 1.8% THD for Optical Coherent Receivers
Articolo
A 51-ns Response-Time, Fully Integrated, High-Side Current Sensor for a 40-V 6-A DC–DC Converter
Articolo
A Multichannel D-Band Radar Receiver with Optimized LO Distribution
Articolo
A Sub-1-V, 350-uW, 6.5-dB Integrated NF Low-IF Receiver Front-End for IoT in 28-nm CMOS
Articolo
Design of Compact D-Band Amplifiers with Accurate Modeling of Inductors and Current Return Paths in 55-nm SiGe BiCMOS
Articolo
High Gain 130GHz Frequency Doubler with Colpitts Output Buffer Delivering Pout up to 8dBm with 6% PAE in 55nm SiGe BiCMOS
Articolo
Impact of the Base Resistance Noise and Design of a -190-dBc/Hz FoM Bipolar Class-C VCO
Articolo
SiGe BiCMOS D-Band Heterodyne Power Mixer With Back-Off Efficiency Enhanced by Current Clamping
Articolo
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