ID:
504990
Durata (ore):
77
CFU:
9
SSD:
ELETTRONICA
Anno:
2024
Dati Generali
Periodo di attività
Primo Semestre (30/09/2024 - 20/01/2025)
Syllabus
Obiettivi Formativi
The course has the overall objective to provide the students an in dept knowledge of the physical mechanisms behind the operation of the more relevant solid-state electronic devices. Starting from a basic knowledge in quantum mechanics and statistical mechanics the student will acquire a detailed understanding of the analytical circuit model that describe the behavior of such devices including an introduction to the numerical model used by circuit simulators. To provide a knowledge that is both reasonably broad and of practical value for the future career of the students, the course will concentrate on the more largely used devices i.e. those available within both Bipolar and CMOS integrated circuit technologies.
Prerequisiti
The knowledge of subjects included within courses of Quantum Mechanics and/or Solid State Semiconductor Physics is required to successfully follow the lectures of the course Integrated Circuit Devices
Metodi didattici
Lectures (hours/year in lecture theatre): 51
Practical class (hours/year in lecture theatre): 15
Practical workshops (hours/year in lecture theatre): 20
Lecture are done with the use of the black-board without the use of transparencies.
Practical classes are done with the use of the black board to review prerequisites and weekly to verify the level of understanding of the explained material.
Practical/workshops are done using the circuit simulator on the computer to evaluate the device behavior in different operating conditions
Verifica Apprendimento
The exam consists of a (written) oral evaluation divided in two parts. The first on key concepts of solid-state physics the second on the characteristics and models of P-N junctions, BJT and MOS transistors. Each of the two parts of the exam produce a score of up to 32 points. The overall score is obtained taking the average of the scores obtained in the two parts. If such an average is above 30 the final score will 30 cum laude.
Testi
The adopted text book is:
R.S. Muller and T.I. Kamins, “Electronics for Integrated Circuits Second Edition,” John Wiley & Sons New York.
The course cover from Chapter 3 to the end. The last chapter is useful but not required to pass the exam. Chapter 1 can be used as a review of the background material.
Contenuti
The course will build upon the knowledge acquired in courses on Solid State Semiconductor Physics to derive the analytical and circuit model of the more relevant solid state electronic devices.
A short list of covered topics is provided here:
Review of the physics background:
to ensure a smooth transition between the know-how already acquired by the students and the new arguments presented, the course starts with a review of the key concepts and models of solid-state semiconductor physics courses.
Metal Semiconductor junction:
unique value of the Fermi Level in thermal equilibrium for a generic structure (even non-uniform). Criteria for the derivation of the band diagram of the Metal-Semiconductor junction. Voltage-current relationship for Metal-Semiconductor junction in forward and reverse bias condition. Simplified and analytical analysis. Different types of Ohmic contacts. Surface effects.
The p-n junction:
non-uniform doping in a semiconductor material. Reverse biased p-n junction. Forward biased p-n junction, current-voltage characteristic. Charge storage and transient analysis. Small and large signal model of the p-n junction (diode).
Bipolar Junction Transistor, BJT:
Transistor effect and linking current. Ebers–Moll model. Models used in circuit simulators (e.g. SPICE). Description of a BJT within an integrated circuit. Early effect. Very low and very high injection levels. Kirk and Webster effects. Charge control model and its use for transient analysis. Small signal model (“pi” model).
MOS structure:
capacitance-voltage characteristic of the two terminal MOS structure. Possible surface conditions: accumulation, depletion and inversion. Flat-band voltage. Three terminal MOS structure. Threshold voltage and surface mobile charge density versus the three terminal voltages.
MOS transistor
Current-voltage characteristic of the 4 terminal MOS structure. Small signal and large signal model for the MOS transistor. Second order effects: short and narrow channel devices, sub-threshold conduction, high field (vertical and horizontal) effects and scaling laws.
Lingua Insegnamento
ITALIANO
Altre informazioni
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Corsi
Corsi
ELECTRONIC ENGINEERING
Laurea Magistrale
2 anni
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Persone
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