ID:
502498
Duration (hours):
102
CFU:
9
SSD:
ELETTRONICA
Year:
2025
Overview
Date/time interval
Secondo Semestre (02/03/2026 - 12/06/2026)
Syllabus
Course Objectives
The course is meant to provide the basic knowledge in the electronic field, useful for understanding the operation and for the design of electronic systems in discrete component and integrated circuit technology. The topics include: linear and non-linear analog circuits with operational amplifiers, the diode, the MOS transistor and the basic amplification schemes with MOSFETs, the elementary logic gates, in particular in CMOS technology, and their characteristic parameters, digital memories.
The course provides the student with the fundamental skills and methodologies for electronic circuit analysis and design. At the end of the course, students will be able to perform AC and DC, small and large signal analysis of simple electronic circuits with operational amplifiers, diodes and MOS transistors. They will able to understand the structure and the operating principle of the basic electronic blocks for signal amplification and to recognise and assess the main specifications of electronic components.
The course provides the student with the fundamental skills and methodologies for electronic circuit analysis and design. At the end of the course, students will be able to perform AC and DC, small and large signal analysis of simple electronic circuits with operational amplifiers, diodes and MOS transistors. They will able to understand the structure and the operating principle of the basic electronic blocks for signal amplification and to recognise and assess the main specifications of electronic components.
Course Prerequisites
Students need to have a basic knowledge of differential calculus and complex numbers, of electromagnetic principles and of the analysis methods for electrical circuits (Kirchhoff's laws, Thevenin's and Norton's theorems, superposition principle, impedance of a linear network).
Teaching Methods
Lectures (hours/year in lecture theatre): 38
Practical class (hours/year in lecture theatre): 48
Practicals / Workshops (hours/year in lecture theatre): 8
Classroom lectures are given using slides prepared by the teacher, shared in the classroom during lectures by means of a computer and a video beam, available also on the Kiro website of the course; lectures are completed with practical examples, consisting of solving tests from previous years of the course, also using the blackboard. Workshop activities are carried out in the electronics teaching lab of the Department of Electrical, Computing and Biomedical Engineering (laboratorio didattico di elettronica, room B3) and consist of the characterisation of simple electronic circuits with standard bench-top electronic instrumentation.
Practical class (hours/year in lecture theatre): 48
Practicals / Workshops (hours/year in lecture theatre): 8
Classroom lectures are given using slides prepared by the teacher, shared in the classroom during lectures by means of a computer and a video beam, available also on the Kiro website of the course; lectures are completed with practical examples, consisting of solving tests from previous years of the course, also using the blackboard. Workshop activities are carried out in the electronics teaching lab of the Department of Electrical, Computing and Biomedical Engineering (laboratorio didattico di elettronica, room B3) and consist of the characterisation of simple electronic circuits with standard bench-top electronic instrumentation.
Assessment Methods
The exam consists of a written test and an oral examination.
1) Written test. Closed-book, closed-notes, 2 hour written test consisting of two sections, each including at least three questions, assessing the student’s knowledge and understanding of the course topics and problem solving capabilities. During the written test, students will be allowed to use only a form, provided by the teachers together with the exam text, containing the main equations for transistors and diodes. The form will also be made available for consultation on the e-learning platform of the course at the beginning of the second semester of the academic year. The test involves the analysis of simple circuits with operational amplifiers, diodes and transistors. The threshold grade to pass the written test is 18/30.
2) Oral examination. The oral examination can be taken only after passing the written test. It is meant to assess the student’s knowledge and understanding of the course topics, problem solving capabilities and technical communication skills. It may become optional if the answers given to selected fundamental questions of the written test (indicated in the text) are correct. The final grade obtained without taking the oral examination cannot be higher than 26/30. If the student sits at the oral examination, whether it is optional or mandatory, the final marks for the overall exam will result from the arithmetic average of the written test and the oral examination marks.
The threshold to pass the exam is 18/30, best mark is 30/30 cum laude.
1) Written test. Closed-book, closed-notes, 2 hour written test consisting of two sections, each including at least three questions, assessing the student’s knowledge and understanding of the course topics and problem solving capabilities. During the written test, students will be allowed to use only a form, provided by the teachers together with the exam text, containing the main equations for transistors and diodes. The form will also be made available for consultation on the e-learning platform of the course at the beginning of the second semester of the academic year. The test involves the analysis of simple circuits with operational amplifiers, diodes and transistors. The threshold grade to pass the written test is 18/30.
2) Oral examination. The oral examination can be taken only after passing the written test. It is meant to assess the student’s knowledge and understanding of the course topics, problem solving capabilities and technical communication skills. It may become optional if the answers given to selected fundamental questions of the written test (indicated in the text) are correct. The final grade obtained without taking the oral examination cannot be higher than 26/30. If the student sits at the oral examination, whether it is optional or mandatory, the final marks for the overall exam will result from the arithmetic average of the written test and the oral examination marks.
The threshold to pass the exam is 18/30, best mark is 30/30 cum laude.
Texts
Microelectronic Circuits
Seventh edition
Autori: Adel Sedra e Kenneth Smith
The Oxford Series in Electrical and Computer Engineering
ISBN: 9780199339143
Teaching material available here:
https://elearning.unipv.it/course/view.php?id=1029
F. Maloberti, G. Martini. Esercizi di Elettronica Applicata. Ed. Spiegel (1998), Milano (available in the library).
F. Maloberti. Understanding Microelectronics: A Top-Down Approach. John Wiley and Sons, Chichester (2012) (available in the library).
Y. Tsividis. A First Lab in Circuits and Electronics. John Wiley & Sons, Inc., New York (2002) (available in the library).
Seventh edition
Autori: Adel Sedra e Kenneth Smith
The Oxford Series in Electrical and Computer Engineering
ISBN: 9780199339143
Teaching material available here:
https://elearning.unipv.it/course/view.php?id=1029
F. Maloberti, G. Martini. Esercizi di Elettronica Applicata. Ed. Spiegel (1998), Milano (available in the library).
F. Maloberti. Understanding Microelectronics: A Top-Down Approach. John Wiley and Sons, Chichester (2012) (available in the library).
Y. Tsividis. A First Lab in Circuits and Electronics. John Wiley & Sons, Inc., New York (2002) (available in the library).
Contents
Analog and digital signals. Data processing and communication.
Linear circuits.
Amplifiers, their model and frequency response. Thevenin's and Norton's theorems. Response of single time constant (STC) networks in the frequency and time domain. Graphical representation of the frequency response through Bode diagrams.
Operational amplifiers.
Ideal operational amplifiers and relevant circuit models. Inverting and non inverting configurations. Circuits with operational amplifiers for analog signal processing. Non ideal features of the operational amplifier.
Diodes.
The semiconductor diode: structure and operating principle, current voltage characteristic and temperature behaviour. Avalanche and Zener diode. Static circuits with diodes. Diode model for small and large signals.
Non linear circuits with diodes.
Half and full wave rectifier. Peak detector. Limiting and clamping circuits.
Metal-oxide-semiconductor field-effect transistors (MOSFET)
Depletion MOSFETs: structure, operating principle, current-voltage characteristic. Enhancement MOSFET. Biasing the enhancement MOSFET in discrete component circuits. Small signal amplifiers with MOSFETs. Single stage amplifiers with common source, gate or drain. Current mirror. MOS amplifiers in integrated circuit technology with active load. CMOS amplifiers. Transmission gates with MOSFETs.
Digital circuits with MOS transistors.
Input-output characteristic of the inverter. CMOS inverter. Logic gates in CMOS technology. Bistable circuit (latch). Astable (waveform generators) and monostable (pulse generator) multivibrator. Random access memories (RAM) and read-only memories (ROM).
Linear circuits.
Amplifiers, their model and frequency response. Thevenin's and Norton's theorems. Response of single time constant (STC) networks in the frequency and time domain. Graphical representation of the frequency response through Bode diagrams.
Operational amplifiers.
Ideal operational amplifiers and relevant circuit models. Inverting and non inverting configurations. Circuits with operational amplifiers for analog signal processing. Non ideal features of the operational amplifier.
Diodes.
The semiconductor diode: structure and operating principle, current voltage characteristic and temperature behaviour. Avalanche and Zener diode. Static circuits with diodes. Diode model for small and large signals.
Non linear circuits with diodes.
Half and full wave rectifier. Peak detector. Limiting and clamping circuits.
Metal-oxide-semiconductor field-effect transistors (MOSFET)
Depletion MOSFETs: structure, operating principle, current-voltage characteristic. Enhancement MOSFET. Biasing the enhancement MOSFET in discrete component circuits. Small signal amplifiers with MOSFETs. Single stage amplifiers with common source, gate or drain. Current mirror. MOS amplifiers in integrated circuit technology with active load. CMOS amplifiers. Transmission gates with MOSFETs.
Digital circuits with MOS transistors.
Input-output characteristic of the inverter. CMOS inverter. Logic gates in CMOS technology. Bistable circuit (latch). Astable (waveform generators) and monostable (pulse generator) multivibrator. Random access memories (RAM) and read-only memories (ROM).
Course Language
Italian
Degrees
Degrees (2)
Bioengineering
Bachelor’s Degree
3 years
ELECTRONIC AND COMPUTER ENGINEERING
Bachelor’s Degree
3 years
No Results Found
People
People (2)
No Results Found