Pair distribution function analysis: The role of structural degrees of freedom in the high-pressure insulator to metal transition of VO2
Articolo
Data di Pubblicazione:
2016
Abstract:
The evolution of the local structure of VO2 was investigated across the pressure-induced insulator to metal transition (IMT) by means of pair distribution function measurements. The pressure behavior of the V-V and V-O bond lengths have been determined. The data demonstrated that the pressure-driven IMT is not activated by the suppression of the Peierls-type distortion. A clear octahedra symmetrization is observed in the metallic phase, suggesting a link between structural degree of freedom and the metallization process.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
Electronic, Optical and Magnetic Materials; Condensed Matter Physics
Elenco autori:
Baldini, M; Postorino, P.; Malavasi, Lorenzo; Marini, C.; Chapman, K. W.; Mao, Ho Kwang
Link alla scheda completa:
Pubblicato in: