Data di Pubblicazione:
1999
Abstract:
Thermoreflectance spectroscopy was used to precisely determine the direct optical gap EgΓ, as a function of composition and temperature of a series of AlxGa1-xSb layers (0.0<~x<~0.5) epitaxially grown on GaSb. The experimental line shapes were fitted with a critical-point functional form including excitonic effects, to derive the direct gap and broadening parameter values. The relation between EgΓ and x shows a x-dependent bowing, which was compared with previous results and theoretical models, leading to the conclusion that EgΓ(x) curves in AlxGa1-xSb alloys have a cubic polynomial form.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
Termoreflectance; Band Gap; Excitons
Elenco autori:
Bellani, Vittorio; Geddo, Mario; Guizzetti, Giorgio; S., Franchi; R., Magnanini
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