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Photoinduced phenomena and shallow levels in K1-xLixTaO3

Articolo
Data di Pubblicazione:
2001
Abstract:
Li admixture greatly enhances n-type photoconductivity of KTaO3 crystals. Thermally stimulated current experiments indicate that this phenomenon is related with the presence of hole-trapping levels with depths of 50 - 100 meV. This is in good agreement with recent energy structure calculations showing the existence of levels at these energies above the top of the VB, due to perturbed O2- p-states. The study of visible photoluminescence and thermoluminescence shows that the hole-trapping centre also controls the emission process. We conclude in favour of radiative recombination involving O--Ta(4+)polaron pairs.
Tipologia CRIS:
1.1 Articolo in rivista
Elenco autori:
Giulotto, ENRICO VIRGILIO; Galinetto, Pietro; Samoggia, Giorgio; Trepakov, Vladimir; P., Syrnikov
Autori di Ateneo:
GALINETTO PIETRO
GIULOTTO ENRICO VIRGILIO
Link alla scheda completa:
https://iris.unipv.it/handle/11571/8010
Pubblicato in:
FERROELECTRICS
Journal
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URL

http://www.tandfonline.com/doi/abs/10.1080/00150190108215003
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