Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells
Articolo
Data di Pubblicazione:
2001
Abstract:
The electronic properties of InxGa(1-x)As(1-y)Ny /GaAs single quantum wells have been investigated by photoluminescence
and photoreflectance spectroscopy as a function of temperature. The introduction of nitrogen leads to a sizable slow down in the redshift of the ground state recombination energy with temperature. We explain the observed effects in terms of an anticrossing between states of the conduction band (CB) edge and
a N-induced localized level resonant with the CB. The extent of this anticrossing, described by the matrix element V(MN) , is derived from the temperature dependence of the exciton recombination energy in a wide compositional range.
The measured functional dependence of V(MN) on nitrogen concentration is compared with results reported in the literature.
and photoreflectance spectroscopy as a function of temperature. The introduction of nitrogen leads to a sizable slow down in the redshift of the ground state recombination energy with temperature. We explain the observed effects in terms of an anticrossing between states of the conduction band (CB) edge and
a N-induced localized level resonant with the CB. The extent of this anticrossing, described by the matrix element V(MN) , is derived from the temperature dependence of the exciton recombination energy in a wide compositional range.
The measured functional dependence of V(MN) on nitrogen concentration is compared with results reported in the literature.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
etrostrutture III-V; nitruri diluiti; quantum wells; proprietà ottiche
Elenco autori:
A., Polimeni; M., Capizzi; Geddo, Mario; M., Fisher; M., Reinhardt; A., Forchel
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