Data di Pubblicazione:
2001
Abstract:
We have per formed photoluminescence measurements in order to study the optical properties of hydrogenated GaAs(1-y)Ny/GaAs heterostructures for y ranging from 0 to 0.03. Hydrogen irradiation leads to : (i ) a progressive passivation of N-related recombination lines for low N content ( y ¤ 0.000 1 ); (ii) a sizable blue shift of the band gap in the "alloy " limit ( y ¤ 0.01 ).
Thermal annealing restores the optical properties samples had
before hydrogenation.
These results can be accounted for by the formation of N-H
complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.
Thermal annealing restores the optical properties samples had
before hydrogenation.
These results can be accounted for by the formation of N-H
complexes and demonstrate that hydrogen irradiation provides a powerful tool for the analysis of photoluminescence spectra of GaAs(1-y)Ny.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
eterostrutture III-V; nitruri diluiti idrogenati; proprietà ottiche
Elenco autori:
M., Bissiri; V., Gaspari; G., Baldassarri; F., Ranalli; A., Polimeni; M., Capizzi; A., Nucara; Geddo, Mario; M., Fischer; M., Reinhardt; A., Forchel
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