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Quantum Hall effect in inhomogeneous trilayer graphene

Articolo
Data di Pubblicazione:
2011
Abstract:
We have performed magneto-transport experiments in trilayer graphene, at temperatures between 2 and 190 K and magnetic fields up to 22 T. Here we report the integer quantum Hall effect in trilayer graphene, showing the quantum Hall plateau at ν=6 and studying its temperature dependence. The symmetry properties of the resistance in the quantum Hall regime and at low magnetic fields are also investigated. The measurements obey the reciprocity relation, and reveal new symmetries that relate the resistances measured with different contact configurations.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
Graphene; Quantum Hall effect; Symmetry
Elenco autori:
C., Cobaleda; Rossella, Francesco; Pezzini, Sergio; E., Diez; Bellani, Vittorio; D., Maude; P., Blake
Autori di Ateneo:
BELLANI VITTORIO
Link alla scheda completa:
https://iris.unipv.it/handle/11571/449541
Pubblicato in:
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Journal
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URL

http://dx.doi.org/10.1016/j.physe.2011.10.007
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